GTI 5G Device RF Component Research Report-v2.0

2019-02-12 13:35:11 | Source:

1 Executive Summary


2 Introduction


3 References


4 Abbreviations


5 5G Device RF Component Industry Status


6 Sub-6GHz 5G Device RF Component


6.1 Sub-6GHz 5G Power Amplifier
6.1.1 Existing Mobile Device Commercial Power Amplifier
6.1.2 Sub-6GHz 5G Power Amplifier Design
6.2 Sub-6GHz 5G Filter
6.2.1 Existing Mobile Device Commercial Filter
6.2.1A 2.4GHz-2.7GHz 5G Filter Design
6.2.2 3.3GHz-4.2GHz 5G Filter Design
6.2.3 4.4GHz-5GHz 5G Filter Design
6.3 Sub-6GHz 5G Low Noise Amplifier
6.3.1 Existing Mobile Device Commercial Low Noise Amplifier Products
6.3.2 Sub-6GHz 5G Low Noise Amplifier Design


7 mmWave 5G Device RF Component


7.1 mmWave 5G Power Amplifier
7.2 mmWave 5G Filter
7.3 mmWave 5G Low Noise Amplifier
7.4 Switches for mmWave
7.4.1 What makes a "Great" 5G Switch?
7.4.2 SOI Technology for 5G Switching


8 Related "Black Technologies"


8.1 Engineered Substrate
8.1.1 What is "Engineered Substrate"
8.1.2 Why do we need "Engineered Substrate"?
8.1.3 Application
8.2 Engineered Substrate:"Anything on Anything"
8.2.1 Smart Cut?
8.2.2 Smart Stacking?
8.2.3 Epitaxy
8.3 CMOS on SOL
8.3.1 CMOS on SOI basics
8.3.2 Basic SOI Advantages
8.3.3 PD-SOI and FD-SOI-Definition
8.3.4 Floating body and Body contact
8.4 CMOS on SOI for RF
8.4.1 RF-SOI
8.4.2 PD-SOI for RF
8.4.3 FD-SOI
8.5 NonSilicon Engineered Substrate
8.5.1 Non Silicon materials for RF
8.5.2 Example1:Indium Phosphide on Gallium Aresnid
8.5.3 Example2:Piezo on Insulator

 

GTI 5G Device RF Component Research Report-v2.0a58c4ba5d092a9cd1adfbbe0142d1743.jpg

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