GTI 5G Device RF Component Research Report-v4.0
1 Executive Summary 7
2 Introduction 8
3 References 11
4 Abbreviations 13
5 5G Device RF Component Industry Status 15
6 Sub-6GHz 5G Device RF Component 19
6.1 Sub-6GHz 5G Power Amplifier 19
6.1.1 Existing Mobile Device Commercial Power Amplifier 19
6.1.2 Sub-6GHz 5G Power Amplifier Design 26
6.2 Sub-6GHz 5G Filter 48
6.2.1 Existing Mobile Device Commercial Filter 48
6.2.1A 2.4 - 2.7 GHz 5G Filter Design 55
6.2.2 3.3GHz-4.2GHz 5G Filter Design 57
6.2.3 4.4GHz-5GHz 5G Filter Design 61
6.3 Sub-6GHz 5G Low Noise Amplifier 70
6.3.1 Existing Mobile Device Commercial Low Noise Amplifier Products 70
6.3.2 Sub-6GHz 5G Low Noise Amplifier Design 71
7 mmWave 5G Device RF Component 74
7.1 mmWave 5G Power Amplifier 74
7.2 mmWave 5G Filter 76
7.3 mmWave 5G Low Noise Amplifier 78
7.4 Switches for mmWave 78
7.4.1 What makes a ‘Great’ 5G Switch? 79
7.4.2 SOI Technology for 5G Switching 80
8 Related ‘Black Technologies’ 81
8.1 Engineered Substrate 81
8.1.1 What is \'Engineered Substrate\'? 81
8.1.2 Why do we need \'Engineered Substrate\'? 82
8.1.3 Application 85
8.2 Engineered Substrate: \'Anything on Anything\' 87
8.2.1 Smart Cut™ 88
8.2.2 Smart Stacking™ 89
8.2.3 Epitaxy 91
8.3 CMOS on SOI 91
8.3.1 CMOS on SOI basics 92
8.3.2 Basic SOI Advantages 93
8.3.3 PD-SOI and FD-SOI – Definition 95
8.3.4 Floating body and Body contact 96
8.4 CMOS on SOI for RF 97
8.4.1 RF-SOI 97
8.4.2 PD-SOI for RF is now called RF-SOI 107
8.4.3 FD-SOI 109
8.5 Non Silicon Engineered Substrate 118
8.5.1 Non Silicon materials for RF 118
8.5.2 Example 1: Indium Phosphide on Gallium Arsenide 121
8.5.3 Example 2: Piezo on Insulator 122
8.5.4 Example 3: Gallium Nitride (GaN) 125
8.6 Conslusion 127