Product

Overview

The R&S®SMW200A is the ideal generator for digitally modulated signals required for the development of new wideband communications systems and the verification of 3G and 4G base stations. A second RF path can be added, as well as a maximum of two baseband and four fading simulator modules – without compromising on signal quality. As a result, the R&S®SMW200A can create signal scenarios that previously required multiple instruments or could not be implemented at all. From MIMO up to 8x2 (in particular interesting for TD-LTE) to LTE-Advanced carrier aggregation including fading (up to 16 internal fading channels) – never before has an instrument offered such high-class signal generation capability.

Parameter

R&S®SMW200A: Key Features

ı From single-path Vector Signal Generator to multichannel MIMO receiver tester

ı One or two RF paths, each with 100 kHz to 3 GHz or 6 GHz

ı 160 MHz I/Q modulation bandwidth (in RF) with internal baseband

ı Internal support for all important digital standards

ı Optional integrated fading simulator with up to 160 MHz bandwidth

ı Up to 8 baseband signal sources and up to 16 fading channels for MIMO, MSR and LTE-A

ı Support of all key MIMO modes including 3x3, 4x4 and 8x2 (in particular interesting for

TD-LTE higher order MIMO receiver tests – 8x2)

ı Intuitive operation via touchscreen with block diagram as key element and SCPI macro recorder / code generator

ı Supported technologies:

* TD-LTE and LTE FDD (3GPP Rel. 8, 9 und 10, i.e. LTE-Advanced)

* TD-SCDMA

* WCDMA incl. HSDPA, HSUPA und HSPA+

* CDMA2000, 1xEV-DV. 1xEV-DO Rev A und 1xEV-DO Rev B

* GSM/EDGE, Edge Evolution, Vamos,

* WLAN 802.11a/b/g/n/ac as well as 11.p and j

* Bluetooth (incl. EDR und Low Energy)

* WiMAX 802.16-2004/Cor1-2005 und 802.16e-2005

* DVB-T/DVB-H

R&S®SMW200A: RF performance

ı Exceptional modulation quality: EVM with 160 MHz IEEE802.11ac: -49 dB (meas.)

ı I/Q modulation frequency response 0.05 dB (meas.) in 160 MHz bandwidth (high-quality mode)

ı Max. specified output power + 18 dBm; +23 dBm (typ.)

ı SSB phase noise -139 dBc (typ.) at 1 GHz, 20 kHz offset (w. option)

ı ACLR 3GPP TM1, 64DPCH

ı 5 MHz offset: >70 dB (meas. 73 dB)

ı 10 MHz offset: >72 dB (meas. 75 dB)

ı High-end pulse modulation with on/off ratio >80 dB and rise/fall time <10 ns

ı Frequency and level setting time: typ. 600 µs