GTI 5G Device RF Component Research Report_v1.0
Table of Contents
1 Executive Summary
2 Abbreviations
3 Introduction
4 References
5 5G Device RF Component Industry Status
6 Sub-6GHz 5G Device RF Component
6.1 Sub-6GHz 5G Power Amplifier
6.1.1 Existing Mobile Device Commercial Power Amplifier
6.1.2 Sub-6GHz 5G Power Amplifier Design
6.2 Sub-6GHz 5G Filter
6.2.1 Existing Mobile Device Commercial Filter
6.2.2 3.3GHz-4.2GHz 5G Filter Design
6.2.3 4.4GHz-5GHz 5G Filter Design
6.3 Sub-6GHz 5G Low Noise Amplifier
6.3.1 Existing Mobile Device Commercial Low Noise Amplifier Products
6.3.2 Sub-6GHz 5G Low Noise Amplifier Design
7 mmWave 5G Device RF Component
7.1 mmWave 5G Power Amplifier
7.2 mmWave 5G Filter
7.3 mmWave 5G Low Noise Amplifier
7.4 Switches for mmWave
7.4.1 What makes a ‘Great’ 5G Switch?
7.4.2 SOI Technology for 5G Switching
8 Related ‘Black Technologies’
8.1 Engineered Substrate
8.1.1 What is \'Engineered Substrate\'?
8.1.2 Why do we need \'Engineered Substrate\'?
8.1.3 Application
8.2 Engineered Substrate: \'Anything on Anything\'
8.2.1 Smart Cut™
8.2.2 Smart Stacking™
8.2.3 Epitaxy
8.3 CMOS on SOL
8.3.1 CMOS on SOI basics
8.3.2 Basic SOI Advantages
8.3.3 PD-SOI and FD-SOI – Definition
8.3.4 Floating body and Body contact
8.4 CMOS on SOI for RF
8.4.1 RF-SOI
8.4.2 PD-SOI for RF
8.4.3 FD-SOI
8.5 Non Silicon Engineered Substrate
8.5.1 Non Silicon materials for RF
8.5.2 Example 1: Indium Phosphide on Gallium Arsenide
8.5.3 Example 2: Piezo on Insulator
GTI 5G Device RF Component Research Report_v1.0