Toshiba has developed SP12T RF antenna switch ICs for smartphones supporting LTE-Advanced, reported Telecompaper.com on Sept 16, 2014. Sample shipment starts from today. Toshiba has developed ‘TaRF6’, a new generation TarfSOI (Toshiba advanced RF SOI) process using silicon-on-insulator (SOI) technology. TarfSOI achieves integration of analog, digital and RF circuits on a single chip. With the new TaRF6 process, MOSFETs customized for RF switch applications have been developed and used in the new SP12T RF antenna switch IC, leading to a performance of 0.42dB in insertion loss (f=2.7GHz) and -90dBm in second harmonic distortion, the company says.